1. Explain the temperature dependence of mobility 2. Consider a homogeneous gall

Question

1. Explain the temperature dependence of mobility 2. Consider a homogeneous gallium arsenide semiconductor at T 300K with N, 1016 cm3 and N = 0, (a) Calculate the thermal-equilibrium values of electron and hole concentrations. (b) For an applied E-field of 10 V/cm, calculate the drift current density. (c) Repeat parts (a) and (b) if N 0 and N, = 1016 cm-3. An abrupt Si p-n junction has N,=1017 cm" on the p side and N,-1016 cm-3 on the n side. At 00K, (a) calculate the Fermi levels, draw an equilibrium band diagram, and find Vbfrom the diagram; (b) compare the result from (a) with Vcalculated from the equation 3.

Explanation / Answer

1. As the temperature increases the scattering among carriers also increases so the mobility keeps on decreasing with increasing temperature. The resulting mobility is expected to be proportional to T 3/2.

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