Dear all, It is a MOS capacitor question from the principle of semiconductor dev

Question

Dear all,

It is a MOS capacitor question from the principle of semiconductor devices (Sima dimitrijev).

Please kindly comment if you know the answer .

Thank you very much

7.13 Which of the following statements, related to an MOS capacitor, is correct? (a) The condition of zero net charge at the MOS capacitor plates is referred to as zero-bias (b) There is no field at the semiconductor surface at (c) The net charge at the MOS capacitor plates has (d) The density of inversion-layer charge is ex- (e) The surface potential ?, increases exponentially (f) The density of inversion-layer charge at the onset (g) The capacitance in depletion mode does not de- (h) The inversion-layer capacitance is proportional condition. to be zero at Vos 0. pressed as Q1 CoVos VFB) with gate voltage in strong inversion. of strong inversion is Q,-??2or pend on the gate voltage applied.

Explanation / Answer

(a) Incorrect

Even at zero applies bias there can be charges due to different metal semiconductor workfunction diefference.

(b) Correct

At Flat band condition there is no band bending in the energy band diagram, hence the field is zero.

(c) Incorrect

Due to finite flatband voltage there can be some charge at zero applied bias.

(d) Incorrect

Qi= Cox(Vgs- Vt)

(e) Correct

(f) Correct

(g) incorrect

With change in Gate Voltage depletion width changed and hence the depletion capacitance.

(h) Correct.

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