A thin piece of semiconducting silicon will be used to fabricate an electrical d

Question

A thin piece of semiconducting silicon will be used to fabricate an electrical device. This layer is 0.10 cm thick and cut into a strip 0.50 cm wide by 1.50 cm long. Electrical contacts are placed at opposite ends of its length. The intrinsic carrier concentration of the silicon at room temperature (300K) is 1.0x1010/cm3 and the bandgap energy is 1.12 eV. .

(a) If the application of 1.0 volt to the contacts results in a current of 0.019 amps, what is the resistivity in (ohm-cm) of the material?

(b) If the material's conductivity is due to doping with aluminum to a level of [Al]= 1x1017 atoms/cm3, what is the resulting conductivity "type" and what is the mobility of these "majority" carriers in this material (assuming that the aluminum is fully ionized - i.e. all Al atoms donated electrons).

Explanation / Answer

A thin piece of semiconducting silicon will be used to fabricate an electrical d

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