1.) Multiple choice questions, for MOSFETS. Only one answer for each. [5 pts eac
ID: 2292476 • Letter: 1
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1.) Multiple choice questions, for MOSFETS. Only one answer for each. [5 pts eachl a) Below threshold voltage and with a source to drainivoltäge applied, the MOSFET will not allow significant current flow from source to drain because 1 1-the channel is experiencing inversion I 1- the channel under the gate is depleted of carners I l- at least one PN junction is reversed blased I I of Voodoo magic. b) Below threshold, if i double the charge on the gate electrode, the charge on the other side of the oxide will also double I 1-increase by square root of 2 I increase by e? I L-explode with excitement. c) For the case of applying DC bias to switch a transistor, the impedance at the gate of a MOSFET is: -zero [-infinite I L: same as the base of BJT [ 1-suffering from severe ennui. d) The minimum capacitance seen by the gate electrode occurs a I 1- half of the threshold votlage 1 1 well above threshold voltage I J right below threshold yotlage 11-2 AM on Friday nights on the way home. e) Which of these mechanisms of charge transport makes Flash memory different from other MOSFETs: [ ]-drift, [ ]-diffusion, [ ]-tunneling, -teleportation.Explanation / Answer
For the question 1.a) The MOSFET does not turns on untill a gate to source voltage is given. If provided with the voltage, the voltage should be greater than threshold voltage. Untill and unless the threshold voltage is given the thickness of depletion layer in the MOSFET remains same.
Answer is Channel under gate are depleted of carriers.
1.b) Answer is oxide also gets doubled. Beacuse there is a depletion layer acting which acts as capacitor.
1.c) Answer is Infinite, generally MOSFET input impedance is very very high we can consider it to be infinite.
1.d) The minimum capacitance in the gate electrode is seen under the condition right below the threshold voltage. For the threshold voltage the depletion capacitance completely vanishes by the inversion layer. So answer would be right below the threshold voltage.
1.e) Tunneling is the charge transport mechanism, which makes Flash memory different from other mosfets.
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