Please select all that apply, When considering a n-MOS capacitor, applying negat
ID: 2250291 • Letter: P
Question
Please select all that apply,
When considering a n-MOS capacitor, applying negative voltage on the gate results in the following
(a) Creation of a depletion region
(b) Accumulation of electrons on the interface Oxide/Semiconductor
(c) Accumulation of holes at the interface
(d) Creation of a depletion region as well as the accumulation of electrons at the interface
(e) Creation of a depletion region as well as the accumulation of holes at the interface
When considering a n-MOS capacitor, applying a small positive voltage on the gate, results in the following
(a) Creation of a depletion region with width W
(b) Accumulation of electrons on the interface Oxide/Semiconductor
(c) Accumulation of holes at the interface
(d) Creation of a depletion region as well as the accumulation of electrons at the interface
(e) Creation of a depletion region as well as the accumulation of holes at the interface
(f) W is constant and = Wm
When considering a n-MOS capacitor, applying a large positive voltage below VT on the gate, results in the following
(a) Creation of a depletion region with width W
(b) Accumulation of electrons on the interface Oxide/Semiconductor
(c) Accumulation of holes at the interface
(d) Creation of a depletion region as well as the accumulation of electrons at the interface
(e) Creation of a depletion region as well as the accumulation of holes at the interface
(f) W is constant and = Wm
When considering a n-MOS capacitor, applying a large positive voltage = VT on the gate, results in the following
(a) Creation of a depletion region with width W
(b) Accumulation of electrons on the interface Oxide/Semiconductor
(c) Accumulation of holes at the interface
(d) Creation of a depletion region as well as the accumulation of electrons at the interface
(e) Creation of a depletion region as well as the accumulation of holes at the interface
(f) W is constant and = Wm
When considering a p-MOS capacitor, applying positive voltage on the gate results in the following
(a) Creation of a depletion region with width W
(b) Accumulation of electrons on the interface Oxide/Semiconductor
(c) Accumulation of holes at the interface
(d) Creation of a depletion region as well as the accumulation of electrons at the interface
(e) Creation of a depletion region as well as the accumulation of holes at the interface
(f) W is constant and = Wm
When considering a p-MOS capacitor, applying a small negative voltage on the gate, results in the following
(a) Creation of a depletion region with width W
(b) Accumulation of electrons on the interface Oxide/Semiconductor
(c) Accumulation of holes at the interface
(d) Creation of a depletion region as well as the accumulation of electrons at the interface
(e) Creation of a depletion region as well as the accumulation of holes at the interface
(f) W is constant and = Wm
Explanation / Answer
When negative voltage is applied to the gate of C-MOS capacitor,both a),c) and e) take place. That is when an negative voltage is applied,a depletion region will be formed and holes will be attracted to that n region. When a positive voltage is applied,electrons get attracted and electric field is formed.
When a small positive voltage is applied to the gate,process a) takes place. That is when a small positive voltage is applied,an electric field is created which forms a small depletion region with width w. As voltage increases,electrons get attracted.
When applying a positive voltage at the gate that is below VT or threshold value,process b) occurs where the electrons get attracted due to the positive charge and get accumulated at the oxide surface.
In an n mos capacitor,when positive voltage is applied at a value equal to VT or threshold voltage, process d) occurs where the voltage level increases and current also increases therefore leading to the formation of depletion region and accumulation of electeons in that region.
When a positive voltage is applied to the gate of p mos capacitor,the process is similar to n mos capacitor. That is process d) occurs where due to positive voltage a depletion region is formed depending on the voltage level and electrons get accumulated in that surface.
When a small negative voltage is applied,process a) takes place where only a small depletion region with width w is formed. When the voltage level is increased,holes get attracted.
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