A high electron mobility transistor (HEMT) controls large currents by applying a

Question

A high electron mobility transistor (HEMT) controls large currents by applying a small voltage to a thin sheet of electrons. The density and mobility of the electrons in the sheet are critical for the operation of the HEMT. HEMTs consisting of AlGaN/GaN/Si are being studied because they promise better performance at higher powers, temperatures, and frequencies than conventional silicon HEMTs can achieve. In one study, the Hall effect was used to measure the density of electrons in one of these new HEMTs. When a current of 10.0 mu A flows through the length of the electron sheet, which is 1.23 mm long, 0.316 mm wide, and 12.8 nm thick, a magnetic field of 1.00 T perpendicular to the sheet produces a voltage of 0.711 mV across the width of the sheet. What is the density of electrons in the sheet?

Explanation / Answer

We know that the Hall voltage , V = Bi / (net) ..
where,

i = current,

n = electron density,

charge of electron,e = 1.60-19C,

t = conductor thickness
B=magnetic field
n = Bi / (Vet) ..
n = (1.00 T x 10*10-6A) / (0.711*10-3V x 1.60-19C x 12.8*10-9m)

By calculating,n = 6.87*1024 e/m3

Related Questions

Navigate

• Browse (All)
• Browse A
• Subjects

---

---

Integrity-first tutoring: explanations and feedback only — we do not complete graded work. Learn more.