Hi!! I need help to this question. Thanks to help me!! SiO2 is formed by the rea

Question

Hi!! I need help to this question. Thanks to help me!!
SiO2 is formed by the reaction below: Si (s) + O2 (g) -> SiO2 (s), occurring on a flat surface (wafer) of Si. The molecular oxygen (O2), species (A) dissolve in SiO2 (s) and diffuses through the oxide film and then reacts with Si at the interface Si/SiO2. Develop an equation to calculate how the film thickness of SiO2 () varies over time, from the following considerations:
A) The oxidation process is controlled by the diffusion of O2 through the dioxide film. B) The process occurs in pseudo permanent regime C) ya=yas=cte. On the surface of the oxide film is exposed to oxygen (x=0) D) ya=0 on the surface Si/SiO2 (x=) Show all the steps for each sentences. Hi!! I need help to this question. Thanks to help me!!
SiO2 is formed by the reaction below: Si (s) + O2 (g) -> SiO2 (s), occurring on a flat surface (wafer) of Si. The molecular oxygen (O2), species (A) dissolve in SiO2 (s) and diffuses through the oxide film and then reacts with Si at the interface Si/SiO2. Develop an equation to calculate how the film thickness of SiO2 () varies over time, from the following considerations:
A) The oxidation process is controlled by the diffusion of O2 through the dioxide film. B) The process occurs in pseudo permanent regime C) ya=yas=cte. On the surface of the oxide film is exposed to oxygen (x=0) D) ya=0 on the surface Si/SiO2 (x=) Show all the steps for each sentences. Hi!! I need help to this question. Thanks to help me!!

A) The oxidation process is controlled by the diffusion of O2 through the dioxide film. B) The process occurs in pseudo permanent regime B) The process occurs in pseudo permanent regime C) ya=yas=cte. On the surface of the oxide film is exposed to oxygen (x=0) D) ya=0 on the surface Si/SiO2 (x=) Show all the steps for each sentences.

Explanation / Answer

Major steps in the lithography process are illustrated in Fig. 3–5 using the patterning of an SiO2 film as an example. The top surface of the wafer is first coated with an ultraviolet (UV) light sensitive material called photoresist. Liquid photoresist is placed on the wafer, and the wafer is spun at high speed to produce a thin, uniform coating. After spinning, a short bake at about 90 °C is performed to drive solvent out of the resist.

a) Distortion of a pattern can result from the effect of the neighboring patterns surrounding it on the photomask. For example, a line may be successfully resolved but two lines close to each other may be bridged. This can be corrected by making the line slightly thinner on the photomask to begin with. This important technique is called optical proximity correction or OPC. Much computational resource is needed to perform OPC, i.e., to fine tune the photomask for a large IC pattern by pattern

b) This flow regime defines radial flow around the multi-fractured horizontal well (MFHW) after compound linear flow. It is characterized as a zero slope on the log-log derivative plot. This flow regime will only be observed if the well exists all alone, in an undeveloped field, and would require an extremely long time and area to develop in tight unconventional formations

c)

Related Questions

Navigate

• Browse (All)
• Browse H
• Subjects

---

---

Integrity-first tutoring: explanations and feedback only — we do not complete graded work. Learn more.