True or False: 1. T/F – Static RAM is a faster and more dense memory than DRAM.

Question

True or False:

1. T/F – Static RAM is a faster and more dense memory than DRAM.
2. T/F –The capability of being written into a stable state is one important property of semiconductor memories.
3. T/F – DRAM uses set of transistors to store charge.
4. T/F – ROMs cannot be used even when only few bits are corrupted.
5. T/F – EPROMs and Flash memory use only a single transistor to store information in each cell.
6. T/F – Vss and Gnd pins form the voltage source and ground pins in the DRAM assembly.
7. T/F – The same power & ground pins are enough when programming the EPROM.
8. T/F – A memory bank can consist of a number of DRAM chips.
9. T/F – Hard failures in the memory cannot be repaired and hence have be replaced or spares have to be added.
10. T/F – Hamming code is a typical error correcting mechanism used to repair Hard failures.
11. T/F – Read-mostly memory is a type of random-access memory.
12. T/F – The horizontal lines of the memory array are called rows connect to the Data-In terminal.
13. T/F – Memory interleaving is done using a group of memory cells.
14. T/F – The more the number of data bits, the lesser is the impact of error correcting bits on the word length.
15. T/F – RDRAM has the highest clock speed and lowest access time among the DRAM alternatives.
16. T/F – The DQS is a unidirectional data strobe signal.

Explanation / Answer

1)F Because Static RAM is a faster than DRAM but not more dense memory. 2)T 3)F 4)F 5)T 6)T 7)T 8)T 9)T 10)T 11)F, Because Read-mostly memory is a type of ROM(Read only memory) 12)T 13)T 14)F 15)T 16)F

Related Questions

Navigate

• Browse (All)
• Browse T
• Subjects

---

---

Integrity-first tutoring: explanations and feedback only — we do not complete graded work. Learn more.