1) An article in Solid State Technology, \"Orthogonal Design for Process Optimiz

Question

1) An article in Solid State Technology, "Orthogonal Design for Process Optimization and its Application to Plasma Etching" by G. Z. Yin and D. W. Jillie (May 1987) describes an experiment to determine the effect of the CFs flow rate (in surface cubic centimeters-SCCM) on the uniformity of the etch on the silicon wafer used in integrated circuit manufacturing. Data for two flow rates are as follows: ETCH UNIFORMITY OBSERVED C.F Flow (SCCM 1 125 SCCM 2.7 3.3 2.6 3.0 3.2 3.5 2.9 200 SCCM a) Setup the hypothesis to test if there is a difference in mean etch uniformity at different flow rates 2.9 3.7 3.4 5.1 4.6 4.9 4.6 b) Use the Tukey's quick test to determine if flow rate affects etch uniformity c) If flow rate affects etch uniformity in 2b) determine the confidence level associated with your conclusion d) Provide an exhaustive interpretation of your results

Explanation / Answer

a)

H0: The diffrence in mean value at different flow rates=0

H1:The diffrence in mean value at different flow rates is not 0

b)

At alpha=0.05 if T is larger than 6 reject null hypothesis

Given

The minimum value=2.6 and maximum value =5.1 hence denote the grups as S and L where the values occur

Ts =2

Tl=5

T=Ts+ Tl=2+5=7

As T=7>6

We reject H0

c)

The confidence level is 1-alpha=1-0.05 = 0.95 or 95% confidence

d)

As we reject the null hypothesis H0 we conclude that "The diffrence in mean value at different flow rates is not 0"

ie there is a significant difference in the mean value at the different flow rates

1 2 3 4 5 6 7 125 2.7 3.3 2.6 3 3.2 3.5 2.9 S 200 2.9 3.7 3.4 5.1 4.6 4.9 4.6 L

Related Questions

Navigate

• Browse (All)
• Browse 1
• Subjects

---

---

Integrity-first tutoring: explanations and feedback only — we do not complete graded work. Learn more.