1. Which statement is correct? a) A MESFET is n-type, because the substrate is n
ID: 2294136 • Letter: 1
Question
1. Which statement is correct? a) A MESFET is n-type, because the substrate is n-doped b) A MESFET is n-type, because the channel is n-doped c) For a GaAs-MESFET, the substrate must be p-type. d) For a GaAs-MESFET, the substrate can be semi-insulating GaAs. 2. The threshold voltage is a) the voltage at which the channel at the drain side is zero. b) the voltage at which the depletion region covers the whole channel. d) the voltage at which the V V 3. Which statement is correct? P 26 c a is always positive for n-MESFET and p-MESFET d) V is negative for p-MESFET 4. Which statement is correct? a) Vo is actually Vos b) Vo can refer to Vos or Van c) Voc refer to the voltage between the gate metal and the channel. d) Vp does not mean Vps 5. Which statement is correct? a) Pinch-off takes-place when the gate depletion region covers the whole channel. b) Pinch-off voltage is the voltage at which the channel at the drain side is zero. c) Pinch-off voltage is the voltage at which the depletion region at the drain side covers the channel. d) The pinch-off voltage at which the current saturates is Va -(qNoa)/2e,.Explanation / Answer
1) MESFET stands for Metal semiconductor FET . Its is combination of Metal and semiconductor . GaAs is used as a aubstrate for making MESFET . Hence option d is correct
2)
Threshold voltage is that VG voltage at which channel if formed . Hence option c is correct
3)
option a s correct which represent the exact formula for calcualtion of Vp voltage
4)
option c is correct . VGC means volatge between Gate and channel .
5)
at pinch off the channel width at drain side is just zero
Hence option b is correct
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