1. A static CMOS inverter circuit has VDD-1.8 V, (W/L),-0.75?m/0.13?m, (W/L)N- 0
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Question
1. A static CMOS inverter circuit has VDD-1.8 V, (W/L),-0.75?m/0.13?m, (W/L)N- 05 um/0.13 um, the oxide thickness is equal to 5 nm, Von I. 8 V, the free mobility is equal to ?0efr-1400 cm 2/V's for electrons and l40cm-600 cm2/Vs for holes, and VinO-1 Veol 0.4V a. Is the MOSFET's to be considered short or long channel devices (Hint: Use va) 1 m/s, v) 4x10 m/s, check whether E.L for each transistor satisfy the long channel or short channel condition.) b. Determine twiL, trus and t, when the load capacitance is equal to SfF. Compare the results obtained: 1. using long channel equations 2. considering short channel effectsExplanation / Answer
We will identify, if the MOSFET is a short channel or long channel device
for that a few working principles of MOSFET should be known to us
1. Between two contacts a barrier is realized n+ source, n+ Drain, p-channel
2. A capacitor on top of the channel can change the barrier height by inducing an electric field
3. If the barrier is high enough, there is no connecting path between the contacts
Id= UCox*W/L((Vgs-Vt)Vds-Vds^2/2)
Therefore, the long channel device
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