We wish to compare the values of gR, and Ag for a CS amplifier that is designed

Question

We wish to compare the values of gR, and Ag for a CS amplifier that is designed using an NMOS transistor with L-0.4 ?m and W 4 ?m and fabricated in a 0.25-um technology specified to have HuCox 267 ??/V2 and V,-10 V/um, with those for a CE amplifier designed using a BJT fabricated in a process with ?- 100 and VA 10 V. Assume that both devices are operating at a drain (collector) current of 100 ?A. Solution For simplicity, we shall neglect the Early effect in the MOSFET in determining Vov; thus, nox 100 =-× 267× 0.4 resulting in Vo0.27 V 21p_2x 0.1 mA/V 0.27-=0.74 ov V?L10X04-40 k? - Ag= g,Fo = 0.74 × 40 29.6 V/V

Explanation / Answer

If we replace NMOS with PMOS, then the physical parameters like W, L will change.

And Un has to change as Up in the equation of Id.

So Vov will change as per the equation.

And gm and r0 will change.

And finally the gain will change.

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