where = 10 SCm, and the current in the upper insulator is zero, find the thresho

Question

where = 10 SCm, and the current in the upper insulator is zero, find the threshold voltage time that J, becomes negligibl small. The applied voltage on the control gate is 10 V 15. A floating-gate nonvolatile semiconductor memory has a total capacitance of 3.71 fF, a con trol gate to floating- 0.49 fF, and a floating-gate to substrate capacitan capaci tance of 2.59 fF, a drain to floating gate capacitance of 0.14 fF: How many electrons are needed to shift the measured threshold by 0.5 V (measured from the co 16. Fill in the following table with simple description of its characteristics Cell size Write one byte rate Rewrite cycle Keep data Applications without power SRAM DRAM Flash FOR SECTION 6.5 POWER MOSFET 17. A power MOSFET has an n-polysilicon gate and a p-base with N.-10"cm' Gate oxide thickness d = 100 r Calculate the threshold voltage. 18. For the device in Prob. 16, calculate the effect of a positive fixed charge density of 5 x 10'"'cm'on the threshold voltage.

Explanation / Answer

FLASH

Cell Size Write one byte rate Rewrite Cycle Keep data without power Application SRAM 100 10-70 ns. Very fast Infinity Volatile in nature, therefore as soon as power break, data is lost. It is used in data storage, as it is volatile in nature continuous power is required. It expensive as compared with dram, but performance is good as compared with dram. DRAM 8 60 ns very fast Infinity It is also volatile in nature i.e. after breaking power data is lost. Used for data storage purpose, DDR3 RAM in computer, less expensive as compared with SRAM but performance is lower than SRAM as periodically refreshing is required

FLASH

4 1sec slow 100000 cycle Non volatile in nature, no power is required for data storage. As flash is non volatile in nature, it is used for permanent data storage in various devices.

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