0%) (a) Draw the energy-band diagram and (b) estimate charging voltage for an NV

Question

0%) (a) Draw the energy-band diagram and (b) estimate charging voltage for an NVRAM cell using Fowler-Nordheim tunneling in a floating gate with tunnel Sio2 thickness of 6 nm. Assume that 2 nm thick oxide is tunnel transparent and that the device is initially in the depletion mode with VFB-1.5 v (a) Draw the energy band diagram and (b) calculate voltage required to operte 10 rn thick Frantz- Keldysh electro-optic modulator assuming that the required modulation depth can be achieved by hifting the absorption spectrum by 20 meV. The excited electron effective tunneling length is 2 m.

Explanation / Answer

Answer:

(b)

The voltage required to operate the Frantz-Keldysh electro-optic modulator is given by:

V = t / 200*L

were t is the thickness of the modulator and L is modulator length.

Substituting the values,

V = 10*10-6 / 200*10-9

V = 50 V

(b)

The voltage required to operate the Frantz-Keldysh electro-optic modulator is given by:

V = t / 200*L

were t is the thickness of the modulator and L is modulator length.

Substituting the values,

V = 10*10-6 / 2000*10-9

V = 5 V

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