7, with the Enhancement mode MOSFET. when pie v ismo. a. loss b. widening the ch

ID: 2266017 • Letter: 7

Question

7, with the Enhancement mode MOSFET. when pie v ismo. a. loss b. widening the channel d. zero 8. The threshold voltage of an n-channel MOSFET can be n-channel MOSFET can be increased by a Reducing the gate oxide thickness b. Reducing the channel length c. Increasing the channel dopant concentration 9· The output characteristics of a MOSFET, is a plot of a. lo as a function of Vos with Vos as a parameter b. lo as a function of Vos with Vos as a parameter c. lp as a function of Vas with Vos as a parameter d. lo as a function of Vos with Vos as a parameter 10. The controlling parameter in MOSFET is a. Vos b. Is c. Vos d. lo

Explanation / Answer

d.Zero
Explaination:Drain current flows if channel is formed and channel is formed due to gate voltage.If there is no gate voltage,no channel is formed thus no drain current.

c.increasing the channel dopant concentration
Explaination:
The voltage required to make the randomly moving electrons to go in a specific path is called as threshold voltage.

So as the dopant concentration increases in the same substrate, the number of electrons offered by the dopant atoms too increase. when the electron number increases in the same substrate area the random collisions increase because of more density and it is difficult to control the electrons and make them flow in a particular direction. So more voltage is needed to control and this voltage to overcome the randomness of the electrons is called as threshold voltage and it increases with increase in dopant concentration.

d.ID as a function of VDS with VGS as a parameter.
Explaination:Channel is formed at particular VGS and after that drain current(ID) flow due to potential difference VDS.

a.VGS
Exlaination:VGS is reponsible for width of channel formation thus concentration of charge in channel thus drain current and device working.

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7, with the Enhancement mode MOSFET. when pie v ismo. a. loss b. widening the ch

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