Question 1 Show all work please. Problem #1: (16 points) sentences each): Answer

Question

Question 1

Show all work please.

Problem #1: (16 points) sentences each): Answer the following with a brief discussion (3-4 a) What is breakdown voltage? b) Describe the mechanisms that lead to breakdown. c) How is a metal-semiconductor device similar to a p-n junction? d) Draw an energy vs. position diagram for a metal-semiconductor (p-type, ,-dm) device and for a MOS (p-type semiconductor) device in equilibrium. How are these similar and how are they different? e) What is the purpose of the insulator layer in MOS and MOSFET devices? f) What do the terms "MOS", "CMOS", and "MOSFET" stand for? g) Explain the flat-band voltage in a MOS device. h) Explain accumulation and inversion in a MOS device.

Explanation / Answer

a) Breakdown voltage is maximum drain to source voltage.metal semiconductor Devices have maximum specified drain to source voltage(when turned off) ,beyond which breakdown may occur.Exceeding the breakdown voltage causes the device to conduct potentially damaging it and other circuit elements due to excessive power dissipation.

b) At breakdown voltage reverse biased body drift diode breaks down and significant current starts to flow between the source and drain by avalanche multiplication process while the gate and source are shorted together.

c) Metal semiconductor is device is similar to PN junction as in Metal semiconductor also after applying forward bias of Vth it starts conducting similar to PN junction. Also in reverse bias very low current flow in both PN junction and Metal semiconductor .Both PN junction and Metal semiconductor have breakdown voltage in reverse bias in which case excessive current flows due to breakdown and damaging the component.

e)Insulating layer separates gate terminal from the underlying source and drain terminals as well as the conductive channel that connects source and drain when the transistor is turned on.Insulating layer serves as the dielectric layer so that gate can sustain high transverse electric field in order to conduct strongly modulate the conductance of the channel.

f) MOS -> Metal Oxide Semicunductor

CMOS -> Complementary Metal Oxide Semicunductor

MOSFET -> Metal Oxide Semicunductor Field Effect Transistor

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