What is the electron current density given n = 2.8 times 10^17cm^-3 and v = 1.2

Question

What is the electron current density given n = 2.8 times 10^17cm^-3 and v = 1.2 times 10^4 cm/s? A PN junction can be divided into three layers: the N layer, the P layer, and a depletion layer in the middle (i) In the depletion layer, E_F is close to neither E_y nor E_c (ii) therefore, the electron and hole concentrations is greatest in the middle (iii). (a) i and ii is correct (b) ii and iii s correct (c) All are correct (d) None is correct The leakage current across a pn junction is due to.... (a) Minority carriers (b) Majority carriers (c) Junction capacitance (d) None of the above Consider a silicon PN step junction diode with Nd = 2.7 times 10^17cm^-3 and Na 3.5 times 10^15cm^-3. Assume T = 300 K. (a) Calculate the built-in potential (b) Calculate the depletion-layer width (Wdep) Consider the silicon PN junction below. If Na 5 times 10^16cm^-3 in the P region and Nd = 1 times 10^17cm^-3 in the N region, under increasing reverse bias, which region (N or P) will become completely depleted first? What purpose does photolithography serve in the integrated circuit manufacturing process? The MOS Capacitor is by far the most prevalent semiconductor device in ICs. (a) True (b) False

Explanation / Answer

15)

ans: minority carriers

explanation:

In the reverse bias the voltage increases in the reverse direction across the p-n junction, but no current due to the majority carriers, only a very small leakage current flows. But at a certain reverse voltage p-n junction breaks in conduction. It is only due to the minority carriers.

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