Sequential layers of GaAs and AlGaAs films were grown by MBE. The GaAs beams wer

Question

Sequential layers of GaAs and AlGaAs films were grown by MBE. The GaAs beams were on throughout the deposition, which lasted 1.5 hrs. However , the Al beam was alternately on for 0 . 5 min and off got 1 min during the entire run. Film thickness measurements showed that 1.8 m of GaAs and 0.35 m of AlAs were deposited.

a. What are the growth rates of GaAs and Al x Ga 1 - x As?

b. What is x?

c. What are the thickness of the GaAs and Al x Ga 1 - x As layers?

d. How many layers of each film were deposited?

Explanation / Answer

a) Growth rate of GaAs = thickness / time taken

                                          = 1.8 um / 60 min

                                          = 0.03 um /min

       Growth rate of AlAs = 0.35 / 30 min

                                          = 0.012 um / min

b) x is the 0.5

c) thickness of each layeys is = 1.8 um / 60

                                                      = 0.03 um

                                                      = 0.35 / 60

                                                       = 0.005 um

d) there are 60 layes of each film deposited

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