Sequential layers of GaAs and AlGaAs films were grown by MBE. The GaAs beams wer
ID: 1996055 • Letter: S
Question
Sequential layers of GaAs and AlGaAs films were grown by MBE. The GaAs beams were on throughout the deposition, which lasted 1.5 hrs. However , the Al beam was alternately on for 0 . 5 min and off got 1 min during the entire run. Film thickness measurements showed that 1.8 m of GaAs and 0.35 m of AlAs were deposited.
a. What are the growth rates of GaAs and Al x Ga 1 - x As?
b. What is x?
c. What are the thickness of the GaAs and Al x Ga 1 - x As layers?
d. How many layers of each film were deposited?
Explanation / Answer
a) Growth rate of GaAs = thickness / time taken
= 1.8 um / 60 min
= 0.03 um /min
Growth rate of AlAs = 0.35 / 30 min
= 0.012 um / min
b) x is the 0.5
c) thickness of each layeys is = 1.8 um / 60
= 0.03 um
= 0.35 / 60
= 0.005 um
d) there are 60 layes of each film deposited
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