These five questions are very important, if someone can add short explanation to

Question

These five questions are very important, if someone can add short explanation to each answer, this would be helpful. 1) Three samples have the same shape. One of them is of n-type, the second is of p-type, and the third is intrinsic. The impurity concentration in the first and second semiconductors is the same. Are the Hall voltages same for the samples ? If not, which one of them gives the largest Hall voltage, and which one gives the smallest ? Experimental conditions are the same. 2) If the concentration of scattering centres increases in the semiconductor, would it increase or decrease the mobility ? 3) How does carrier mobility depend on T ? 4) Which sample produces greater Hall voltage: long and narrow, or short and wide ? Thickness is the same in both cases. 5) Does orientation of the sample in magnetic field affect the Hall voltage ? Explain your answer.

Explanation / Answer

1) Hall voltage for n type = Hall voltage for n type ,,,,

but HAll voltage for intrinsic minimum

3) mobility is proportional to (Temperature)^(-3/2) ...................

4) long and narrow produce highest voltage ..............

5) orientation is not affected ...........

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