PLEASE ANSWER THE QUESTION IN FULL DETAIL. PLEASE DO NOT SKIP STEPS. Answer all

Question

PLEASE ANSWER THE QUESTION IN FULL DETAIL. PLEASE DO NOT SKIP STEPS.

Answer all questions in detail.

1) Determine the reverse saturation current for the BC PN junction

2) Assuming Vce (sat) = 0.3 volts, calculate Ic?

3) Using ideal diode equation, calculate the forward diffusion current in the BC junction diode.

4) Finally, discuss and compare the values to Ic -- What do you conclude from these results?

2. (10 pts) Consider 17 typical silicon based transistor at room temperature biased in the saturation region. EB a doping is 10 19 10 and 101 respectively. (2 pts) Determine the reverse saturation current for the BC PN junction. (2 pts) Assuming VCE(sat 0.3 V, calculate Ic. (2 pts Using the ideal diode equation, calculate the forward diffusion current in the BC junction diode. (4 pts Finally, discuss and compare that value to Ic. what do you conclude from the results? 40K2. R. 2002. R4 20002. 0.7 V. Vcc 10 V. au 1 kus, A 10 cm Ver R2 R4 R3

Explanation / Answer

The saturation current in a forward biased PN junction is the maximum current the PN junction will pass before overheating and failing (thermal runaway) . In a silicon planar PN junction the nominal forward bias voltage is Point 6 V To Point7 V and the saturation current will depending on the type of junction and its application The total current is equal to the sum of hole current (to the right) and electron current (tpo the left).

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