A basic MOS of a gate conductor and a semiconductor (which is the other conducto

Question

A basic MOS of a gate conductor and a semiconductor (which is the other conductor), separated by a gate dielectric. Consider a MOS transistor using silicon-dioxide (SiO2)... the gate oxide. The gate oxide capacitance can be approximated as a capacitor. The gate oxide capacitance per unit area is given by where and are the permittivity and the thickness of the gate dielectric. (pi) it the thickness of the SiO2 User is 2 times 10-6 cm. find the gate oxide unit area, (b) It the length and the width of the gate region are I = 5 times 10-4 cm. and W= 2 times 10-3 cm respectively find the total gate capacitance

Explanation / Answer

given per unit length capacitance = 17.5 F/ft
di electric constant of insulation material r=1.64
the ratio of inner and outer radii of insulator is
lne(D/d)=(2*pi*0*r)/(C/h)

where D/d is the ratio of radius

C/h is the per unit length capacitance

0=8.85*10-12

hence D/d=e(2*pi*0*r)/(C/h)

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