The vapor-liquid-Solid (VLS) method is a useful method to synthesize nanowires,

Question

The vapor-liquid-Solid (VLS) method is a useful method to synthesize nanowires, especially semiconductor nanowires. The growth rate depends on many factors, such as temperature, precursor pressure and the catalytic activity. Take Si nanowire synthesis as an example. Suppose the growth temperature is 500 °C, precursor gas pressure (SiH4) is 1 Torr and the flowing rate of SiH4 precursor is 10 cm3 /s. The cross section of the tube is 5 cm2. All Si atoms that encounter the cross section of the Au catalyst will be absorbed and precipitate out for Si nanowire growth. The radius of nanowire is the same as that of the catalyst, which is 50 nm what is the growth rate (in m/min)? What are factors which we neglected in calculations that might have changed the answer.

Explanation / Answer

Growth rate = 10cm^3/s / 5 cm^2 = 2cm/s = 2*10^-2 / 60 = 333 microm/min

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