1)The intrinsic concentration of electrons and holes (i.e. concentration of e-h

Question

1)The intrinsic concentration of electrons and holes (i.e. concentration of e-h pairs) in Si at room temperature is approximately 1x1010 cm-3.
Given the density and atomic mass of Si to be 2.33 g/cm3 and 28.06 g/mol, determine the ratio of ionized to
unionized Si atoms in the lattice.


2)At room temperature the intrinsic carrier concentration for InSb is 1.6x1022 m-3 and the electron and hole mobilities are 7.7 and 0.07 m2/V-s, respectively. Compute the conductivity of InSb at room temperature.


3)Calculate the resistivity of Si doped to a concentration of 2x1018m-3 boron (B) atoms given that the mobilities for electrons and holes
in silicon are 0.14 and 0.05 m2/V-s, respectively.

Explanation / Answer

I am sorry number 3 is 62.5 (Ohm-m)

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