Provide your perspective the potential value that any two of the following three

Question

Provide your perspective the potential value that any two of the following three new memory technologies, Phase Change Memory (PCM RAMs), Spin Transfer Torque RAMs (STT RAMs), and Resistive RAMs (ReRAMs), add to the more mature memory technologies (SRAM and DRAM) studied in the lecture. Provide discussion on topics including, but not limited to:

-What new features are enabled by these memories (compared to SRAM/DRAM)? More broadly,describe what the two technologies (of the three above ) that you've picked are, and how they fit into the existing memory landscape of FLASH, SRAM, DRAM, etc.

-Which companies are engaged in their fabrication and design?

-What are end-use products that could benefit from such new technologies (e.g. for the above companies or researchers, are there any envisioned products or application areas

-if so, why are these technologies well-suited to these areas)?

-Reviewing the current information on these technologies, what use case did you find most interesting?

Explanation / Answer

Phase change memory is a kind of Computer RAM(Random Access Memory). It works on the principle of changing the matter state to store data.It's speed is closer to DRAM so it can be used with NVDIMM(non volatile dual in-line memory module). The durability of PCM is high when compared to flash memory. The data stored on PCM can be overwritten without erasing the previous data. The state of Matter used for fabrication of PCM can be changed rapidly from amorphous to crystalline and vice versa. It can be used used in mobile devices. Companies involved in fabrication and development of PCM are IBM, Micron Technology and Samsung Electronics.

Spin transfer Torque RAM is based on the Magnetic tunnel Junction technology. The main advantages of STTRAM is its low power consumptions and scalability over previous magnetic effect based RAM, lower latency. The performance of STTRAM is high as it does not require power refresh. It can be used as an option among the others or the replacement of SRAM, DRAM, Flash memory. Name of some companies involved in fabrication and development of STTRAM are Everspin, Grandis, IBM-TDK, Samsung, Hitachi, Seimens . The STT RAM are well suited for mobile phones and portable multimedia players. STTRAM can be available in standalone memory chips and can also be available in integrated circuit.

Resistive RAM( ReRAM or RRAM ) is a type of Computer Random Access Memory. It is somewhat similar to Phase Change Memory as these both memory works on the memristors technologies. ReRAM works on the similar principle on which Semiconductor devices work. It stores data using ions. In ReRAM ions behave on nanometer scale like in battery. The advantage of ReRAM over Flash memory is its lower latency and write faster as compare to flash memory. This type of memory are best suited for sensor devices for industrial, automotive and Internet of Things(IoT) applications. Companies involved in fabrication and development FujitSu Semiconductor in collaboration with Panasonic Semiconductor Solutions, and Western Digital.

Smart Cards and Microcontrollers will adopt these emerging technoligies as a substitute for embed Flash.

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