mA Q2. Consider the Si solar cell below whose max power point is/m-20-nd, 0.5 V

Question

mA Q2. Consider the Si solar cell below whose max power point is/m-20-nd, 0.5 V busbar texturing ander anti-reflection coatineg Emitter doping: ND = 1018/cm3 Base doping: Na = 1015/cm3 Electron mobility in Si-1000 Hole mobility in Si-500 Intrinsic conc. ni (Si) = 1010/cm3 front surtace doping emitter Vs Vs Answer the following questions: i) Estimate the emitter and base resistivity. Estimate the emitter sheet resistance if its thickness = 100 nm (Note: units of sheet resistance are typically given in terms of "Ohms per square," ie., Estimate the maximum spacing between the metal fingers if we want

Explanation / Answer

short circuit current loss in emitter crystalline solar cell is analyzed by a 2D device simulation.

Voc=kT/q(ln((&p+Ndsub)&p/Ni2))

we can reduced the loss by reducing the wafer of the thickness.

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