1 pts D | Question 12 Polysilicon films can develop residual Ointrinsic) stresse

Question

1 pts D | Question 12 Polysilicon films can develop residual Ointrinsic) stresses as high as 500 MPa during deposition. O False D | Question 13 1 pts Select All correct statements about Epitaxial growth of topical films D Single crystal silicon deposition is accomplished by chemical vapor deposition (CVD) Stlane (SiH4], dichlorosilane (SilH2C12) or silicon tetrachloride (SiC14) is used Doping of the growing topical slicon film has to be done only after the CVD deposition O Dopant-bearing gases are added to the growth chamber O They do not dissociate, just diffused into the film

Explanation / Answer

Answering the first question as per Chegg guidelines :

Answer is True because of the process of island coalescence during deposition.

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