)Carvas 1 pts D Question 10 Select All incorrect Statements about Limiting facto

Question

)Carvas 1 pts D Question 10 Select All incorrect Statements about Limiting factor in etching: in lsotropic etching diffusion of acid to- and removal of hydrates bj from the reaction front are limiting factors D in anisotropic etching: diffusion of acid to- and removal of hydratsfrom the reaction front are limiting factors O In anisotropic oxidation: Reaction rate is the limiting factor ln isotropic oxidation Reaction rate is the imiting factor O Diffusion is fast for the anisotropic etching, with reaction rate being the limiting factor O Diffusion is fast for the isotropic etching, with reaction rate being the limiting factor D Question 11 1 pts Select all correct statements about Resistivity Change in MEMS O Change in resistivity of materials undergoing deformation is due only to Change in geometry

Explanation / Answer

both isotropic and anisotropic etchings involve the oxidation of silicon formation of silicate hydrates and their transfer from the reaction front .in isotropic etching the limiting factor is the diffusion of acid to,and the removal of hydrates from ,the reaction front .in contrast diffusion is fast for the anisotropic etching ,with reaction rate being the limiting factor

2 , 3 , 6 are wrong statements

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