17. For p-Schottky diode, a) The depletion region equation is the same as that o

Question

17. For p-Schottky diode, a) The depletion region equation is the same as that of a p-n junction diode b) The depletion region equation is the same as that of an no-p junction diode c) The depletion region equation is the same as that of a p-n junction diode. d) the metal acts as n -doped semiconductor. e) the metal acts as p-doped semiconductor. 18. For n-Schottky diode, a) W-[2EVb/ Nolo5 at thermal equilibrium. b) W-[2EsVb/gNAJO5 at thermal equilibrium. c) W I2Es Ma-VF)aNalo.5 if the diode is in the forward region. d) W increases with the value of Vai 19. For p-Schottky diode, a) W-12EsVbi/gNalo5 at thermal equilibrium b) W-12E,Vb/gNAO 5 at thermal equilibrium c) W2E (M-FaNoo in the forwards region with an applied voltage d) W increases with the value of Va V 20. For n-Schottky diode, a) WE V+VRNol0. in the reverse region with an applied voltage -VR b) W increases with the value of VRl. W 12E V+VRGNA in the reverse region with an applied voltage -VR d) W decreases with the value of IVRl. 21. For p-Schottky diodes, a) W 12Es (VVR)NDO5 in the reverse region with an applied voltage- -V b) W increases with the value of [VRI c) wsREg (Vo +VR)/aNaJo 5 in the reverse region with an applied voltage =-VR d) W decreases with the value of IVRI. 22. For Schottky diodes a) current transport mechanism is diffusion. b) current transport mechanism is drift. c) current transport mechanism is charge recombination. d) current transport mechanism is thermionic emission.

Explanation / Answer

17) For p-schotly depletion region is same as n+p diode because n+ acts nearly as metal and depletion width is negligible on its side.(B) is correct.

18) Both (A) and (C) are correct.

19) (B) is correct.

20) (A) is correct.

21) (C) is correct.

22) Thermoionic emission. Carriers are transferred from top of barrier. (D).

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