11. The barrier height is a) the difference between Ec at the interface and Er i
ID: 2293991 • Letter: 1
Question
11. The barrier height is a) the difference between Ec at the interface and Er in the bulk when a forward voltage is applied. b) the difference between Eg at the interface and Es in the bulk when a reverse voltage is applied. d) All of the above. 12. The built-in potential (Ma) is equal to 13. For an n-Schottky contact, at an applied voltage- OV a) metal Fermi level semiconductor Fermi level. b) semiconductor Fermi level is lower than metal Fermi level by ga c) semiconductor Fermi level is lower than metal Fermi level by gs d) generally, metal Fermi level > semiconductor Fermi level e) generally, metal Fermi level metal Fermi level. e) metal Fermi level semiconductor Fermi level. e) generally, semiconductor Fermi levelExplanation / Answer
11) Barrier Height is the difference in the workfunction of two joint materials. Therefore (C) is correct.
12) Built in Poteintial is amount of band bending which is difference in workfunctions. Therefore (A) is correct.
13) At 0V applied bias Fermi level is equal in both because of no current flow.(A) is correct.
14) If positive bias is applied metal fermi level will become lower than semiconductor.(C) is correct.
15) Similarly as explained above (d) is correct.
16) n schottky region should be equal to p+n junction because in highly doped side depletion width is negligible and metal act as highly doped material. Therefore (C) is correct.
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