PD - 97390 International TR Rectitier RLB8721PbF HEXFET Power MOSFET Voss Ros(on
ID: 2268115 • Letter: P
Question
PD - 97390 International TR Rectitier RLB8721PbF HEXFET Power MOSFET Voss Ros(on) max Qg (typ.) Applications Optimized for UPS/Inverter Applications . High Frequency Synchronous Buck DSS GS . High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits Very Low RDS(on) at 4.5V VGs Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current Lead-Free TO-220AEB IRLB8721PbF Gate Drain Source Absolute Maximum Ratings Max 30 ±20 Parameter Units Drain-to-Source Volta Gate-to-Source Voltage lp @ Tc =25°C |Continuous Drain Current. VGs @ 10V IT100°C Continuous Drain Current, Ves 10V Pulsed Drain Current Po @Tc-25°C | Maximum Power Dissipation Pn @Te = 100°C |Maximum Power Dissipation 65 0.43 Linear Derating Factor Operating Junction and Storage Te Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw WIo 55 to 175 ature Ran eC 300 (1.6mm from case 101b in (1.1N·m) Thermal Resistance Parameter Units Max 2.3 Junction-to-Case Case-to-Sink, Flat Greased Surface Junction-to-Ambient 0.5 62 Notes through are on page 9 www.irf.comExplanation / Answer
3a)
From the figure 12, for 25°C curve, a Vgs ~=6.5V corresponds to an on resistance of 8 milli ohms
b)
From the same graph ,if the temperature is raised to 125°C , observing the 125°C graph the on resistance is nearly 13 milli ohms
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