Problem 5 Figure 3-17 will be useful in answering the following questions (15 pt

Question

Problem 5 Figure 3-17 will be useful in answering the following questions (15 pts) a. Using Figure 3-17, give approximate (but reasonable) values for n, at 450'K for each of the three semiconductors represented (Ge t Si and GaAs). Use the table below to give you values. Indicate on the attached table. (10 pts.) Material ues you put in the n, at 450°K Germanium Silicon Gallium Arsenide b. At 450°K, would a donor density Np-5x10/em2 be sufficient to make silicon a good n-type semiconductor at this temperature? Justify your answer by comparing the appropriate numbers. (5 pts.) Problem 6. Briefly explain why, for a given intrinsic semiconductor, a small change in temperature results in a large change in the intrinsic carrier concentration. (5 points)

Explanation / Answer

6solution:

1.as the temperature increase is increased, the number of broken bonds increase because there is more thermal energy available so more and more electron gain enough energy to break bonds.

2.as the more bonds broken more number of electron hole concentration is increased.

3.intrinsic semiconductor means number of holes equal to number of electron. A electron hole pair to be created bond must be broken in the lattice this required energy.

4.so as the thermal energy increase electron in valance band gain enough energy and jump to conduction band and leave a hole.

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