Mark all the correct statements (i)when light is applied on a p-type direct semi

Question

Mark all the correct statements (i)when light is applied on a p-type direct semiconductor, which of the following is correct?
a)tau_p=1/beta.p_n0
b)tau_p=1/beta.p_p0
c)tau_p=1/beta.n_n0
d)tau_p=1/beta.n_p0
(ii)which of the following is correct?
a)minority time constant is inversely proportional to the minority carrier concentration at thermal equilibrium.
b)minority time constant is inversely proportional to the minority carrier concentration at thermal equilibrium.
c)we should consider majority e time as well as minority life time in determining U.
d)we should consider only minority life time , since there is no majority life time.

Explanation / Answer

(i)when light is applied on a p-type direct semiconductor, which of the following is correct?
a)tau_p=1/beta.p_n0

(ii)which of the following is correct?

a)minority time constant is DIRECTLY proportional to the minority carrier concentration at thermal equilibrium. d)we should consider only minority life time , since there is no majority life time.

As generation rate = execss minority carrier concentration /minority time constatnt. so if the generation rate is constant option A is correct but Directly proptional as in the question first to options are same I am taking First option and corrected it. And option D is also correct as when light is applied electron and holes are created in pairs. so equal amount of holes and electrons created but majaority carrier concentration is unchanged and so properteris. So we should consider only minority life time

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