Using the software of your choice (mathead, excel, matlab etc) graph the diode c

Question

Using the software of your choice (mathead, excel, matlab etc) graph the diode characteristics using the values and instructions provided below: I = I_o(e^q^V/dY -1) superimpose on the same graph the I-v characteristics of a diode for n = 1.5 and I_o = 1 times 10^-9, 1 times 10^-10, and 1 times 10^-11 A (@ room temperature); generate a linear graph, as well as a ln (I) vs. V graph. superimpose on the same graph the 1-v characteristics of a diode for I_o = I times 10^-12 A, and n = 1.0, 1.5 and 2.0 (@ room temperature); generate a linear graph, as well as a In(I) vs. V graph. Superimpose on the same graph the 1-V characteristics of a diode with n = 1.2, 1_0 = 1 times 10^-12 A at temperatures of - 65, 27, and 150 degree C. Obtain the spec sheets for the diodes included in the lab kit. Provide the definitions for the following diode parameters: junction capacitance reverse recovery time dynamic resistance breakdown voltage

Explanation / Answer

Part C: 1. Junction capacitance : it is the capacitance of the diode measured at the
terminals and depending on the depletion width—depletion occurring primarily in the base region in power diodes—reported for given values of VR

2.Reverse Recover Time: When switching from the conducting to the blocking state, a diode or rectifier has stored charge that must first be discharged before the diode blocksreverse current. This discharge takes a finite amount of time known as the Reverse Recovery Time, or trr.

3. Dynamic resistance: Dynamic resistance is the slope of the voltage vs current curve of the diode at a particular operating point. It is called the dynamic reistance because it is based on incremental change in voltage diovided by incremental change in current.

4. Break down Voltage: the breakdown voltageis the minimum reverse voltage that makes the diode conduct appreciably in reverse.

PART B : diode specification sheet :

Parameters Value

Repetitive peak reverse voltage VRRM 100 V

Working peak reverse voltage VRWM 75 V

DC blocking voltage VR 75 V

RMS Reverse voltage VR(RMS) 53 V

Forward continuous current IF 300 mA

Power dissipation Ptot 500 mW

Junction temperature Tj + 175 °C
Storage temperature range Tstg - 65 to + 175 °C

PART A :

Matlab program to plot VI characteristics of a diode

clc;

close all;
clear all;
a=input('Enter the temperatre in degree centigrade ');
b=input('Enter the reverse saturation current at room temperature ');
q=1.6e-19;
k=1.38e-23;
t=a+273;
v=-0.2:0.01:0.25;
i=b*(exp(q*v/(k*t))-1);
plot(v,i)
xlabel('Voltage -->')
ylabel('Current -->')
grid on;

OR TRY THIS

I0 = 1E-9; % mA

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