3) The band gaps of AIN, GaN, InN are -6 ev, 3 eV, 1 eV, respectively. a. Withou
ID: 2077198 • Letter: 3
Question
3) The band gaps of AIN, GaN, InN are -6 ev, 3 eV, 1 eV, respectively. a. Without considering the bandgaps, what about these compounds indicates that they could be extrinsic semiconductors (created not natural)? b. Now, considering the band gaps, describe each compound with one of the following terms conductor, or insulator. AIN N c. For a semiconductor in part b, what could you dope it with to make it an type semiconductor? d. Explain the band gap differences for the three compounds based on the degree oforbital overlap that leads to the bands and the electronegativity of each atom in each compound.Explanation / Answer
a.Without considering the bandgaps,these compounds indicates extrinsic semiconductor….
b.AIN is an insulator,GaN is a semiconductor,InN is a conductor…
c.Along with Ga add P,As it will be turned into an n type semiconductor
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