Semiconductor Laser Characterization Graded-index separate confinement double he
ID: 1834501 • Letter: S
Question
Semiconductor Laser CharacterizationGraded-index separate confinement double heterostructure (GRIN-SCH) InGaAs/GaAs lasers with various cavity lengths were tested in the lab. The 100?m wide oxide strip lasers consists of two pairs of 10nm In0.2Ga0.8As quantum-well (QW). The barriers of the lasers are 10nm GaAs (undoped). The lasers give a lasing wavelength around 970nm at room temperature. The refractive index of the active InGaAs layer is 3.4.
(v) What is the photon energy? Subsequently, estimate the bandgap energy of the 10nm InGaAs quantum-well (QW).
Explanation / Answer
energy of photon = hc/= 6.626068 × 10-34 *3*108 /970 * 10-9 = 2 * 10-19
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