THANKS! 1. The intrinsic carrier concentration, ni. {increases, decreases} as th

Question

THANKS! 1.

The intrinsic carrier concentration, ni. {increases, decreases} as the crystal temperature increases. {increases, decreases} for wider bandgap materials. Is {greater than, less than} the majority carrier concentration in a doped semiconductor. When a p-n junction is forward-biased, the largest diode current component is the {diffusion, drift} current. When a p-n junction is reverse-biased, the depletion region {increases, decreases) as the reverse voltage increases. The diode saturation current, IS, can be increased by increasing the {diode temperature, diode junction area, built-in electric field}. One component of the drift current is {electrons, holes} that drift across the junction from the n-type to the p-type material. The substrate or bulk material for a P-channel MOS transistor is {p-type, n-type}. For an NMOS transistor operating in the triode region, the drain to source resistance {increases, decreases} as the gate voltage increases. In NMOS transtors, lambda {increases, decreases} as the channel length gets shorter.

Explanation / Answer

1. increases

2. decrases

3. greater

2. drift current

c. increases

d. diode temperature

e. holes

f. n type

g. decreases

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