Please Show Work by hand and not just using a calculator Thank you... The atomic

Question

Please Show Work by hand and not just using a calculator Thank you...

The atomic number of Silicon is 14. How many valence electrons does it contribute? (Select One): 1 2 3 4 5 The atomic number of Phosphorus is 15. How many valence electrons does it contribute? (Select One): 1 2 3 4 5 The atomic number of Boron is 5. How many valence electrons does it contribute? (Select One): 1 2 3 4 5 The atomic number of Germanium is 32. How many valence electrons does it contribute? (Select One): 1 2 3 4 5 An N-Type Silicon is generated by diffusing (Select One): Boron into intrinsic silicon Phosphorus into intrinsic silicon Boron into extrinsic silicon Phosphorus into extrinsic silicon A P-Type Silicon is generated by diffusing (Select One): Boron into intrinsic silicon Phosphorus into intrinsic silicon Boron into extrinsic silicon Phosphorus into extrinsic silicon Given: N-type Silicon bar Length = 10cm Nd= 1016 per cm3 Voltage across the bar = 10V. mu n=1500cm2/v.s q= 1.6 times 10-19 Coulomb Find: Drift velocity

Explanation / Answer

Problem 1: Orbit sequence: 1s2 2s2 2p6 3s2 3p2    So, valency is 4

Problem 2: Orbit sequence: 1s2 2s2 2p6 3s2 3p3     So, Valency is 5

Problem 3: Orbit sequence: 1s2 2s2 2p1     So, Valency is 3

Problem 4:      Valency is 4

Problem 5: IN N-type semiconductor, The addition of pentavalent impurities such as antimony, arsenic or phosphorous contributes free electrons, greatly increasing the conductivity of the intrinsic semiconductor.

So, answer is Phosporous into intrinsic silicon

Problem6: In P-type semi conductors, The addition of trivalent impurities such as boron, aluminum or gallium to an intrinsic semiconductor creates deficiencies of valence electrons,called "holes".

So, answer is Boron into intrinsic silicon

Problem 7: Given N-type silicon bar

                     Length L= 10cm

                     ND = 10^16 per Cm^3

                     Voltage across bar= V= 10V

                     myu n = 1500 Cm^2/V-s

                     q = 1.6 x 10^-19 C

   Voltage across bar per cm = 10/10 = e = 1 V/ cm

   1. Drift Velocity = Vdn = myu n * e = 1500 Cm^2/V-s * 1 V/cm = 1500 Cm/sec or 15 m/sec

   2. Conductvity Sigma = q * ND * myu n * length= 1.6 x 10^-19 C * 10^16 per Cm^3 * 1500 Cm^2/V-s * 10cm = 24 mho

   3. Resistivity = 1/ conductivity = 1/24 = 41.67 milli Ohms

Problem 8: Intrinsic semi conductors have Low conductivity

Problem 9: Extrinsic semi conductors have High Conductivity

Problem 10: P-type and N-type semi conductors are called as Extrinsic semi conductors

                    

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