i need all of these done, please dont do one if you cant do them all thank you.

Question

i need all of these done, please dont do one if you cant do them all thank you.

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If the doping level is ND 0 cm 3, what is the concentration of holes? A What is the intrinsic concentration (ng) at this 135 (b) temperature? Ptype silicon substrate, with N 5x 10 cm 3. ts is doped by phosphorus. Determine the concen- tration of electrons and holes at room temperature if the doping level is ND 1015 cm 3. What is the concentration of elecuons and holes, at T 273 C, where the intrinsic concentration is ni 5 x 10 cm 3?

Explanation / Answer

(29)

Phosphorous is act as donar

At room temperature ni=10^10 cm^-3

The concentration o electron at room temperature is

n0 = ND - NA

= 10^15 - (5*10^14)

= 5*10^14 cm^-3

The concentration of holes

p0 = ni^2/n0

= (10^14)^2/5*10^14

= 2*10^13 cm^-3

At temperature T=273 degree C = 300K

Since ND > NA

The concentration of electron is

n0 = ND

= 10^15 cm^-3

The concentration of hole is

p0 = ni^2/n0

= (5*10^14)^2/10^15

= 2.5*10^14 cm^-3

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